The T-RAM acronym for "Thyristor RAM" or "Thyristor Random Access Memory" is a new type of DRAM memory invented and developed by T-RAM Semiconductor. >
This technology exploits the electrical property known as negative differential resistor and is characterized by the innovative way in which its memory cells are built, combining DRAM in terms of space with that of SRAMs in terms of speed. Much like the current 6T-SRAM, or SRAM memories with 6 cell transistors, is largely different to the fact that CMAM latch CMAMs, consisting of 4 of the 6 transistors of each cell, is replaced by a bipolar latch PNP -NPN of a single Thyristor. The result is to significantly reduce the area occupied by each cell, thus obtaining a highly scalable memory that has already reached storage density several times higher than the current SRAMs.
Thyristor-RAM provides the best density / performance ratio available between the various integrated memories, matching the performance of an SRAM memory, but allowing 2-3 times greater storage density and lower power consumption. The new generation of T-RAM memory is expected to have the same storage density as DRAMs. Voices correlateemodify wikitesto Links externalize the wikitesto
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